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r07ds0283ej0700 rev.7.00 page 1 of 10 mar 28, 2011 preliminary datasheet bb502c built in biasing circuit mos fet ic uhf rf amplifier features ? built in biasing circuit; to reduce us ing parts cost & pc board space. ? low noise; nf = 1.6 db typ. at f = 900 mhz ? high gain; pg = 22 db typ. at f = 900 mhz ? withstanding to esd; built in esd absorbing diode. withstand up to 200v at c=200pf, rs=0 conditions. ? provide mini mold packages; cmpak-4(sot-343mod) outline renesas package code: ptsp0004za-a (package name: cmpak-4 ) 1. source 2. gate1 3. gate2 4. drain 1 4 3 2 notes: 1. marking is ?bs??. 2. bb502c is individual type number of renesas bbfet. absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v ds 6 v gate1 to source voltage v g1s +6 ? 0 v gate2 to source voltage v g2s +6 ? 0 v drain current i d 20 ma channel power dissipation pch 100 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c r07ds0283ej0700 (previous: rej03g0832-0600) rev.7.00 mar 28, 2011
bb502c preliminary r07ds0283ej0700 rev.7.00 page 2 of 10 mar 28, 2011 electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 6 ? ? v i d = 200 a, v g1s = v g2s = 0 gate1 to source breakdown voltage v (br)g1ss +6 ? ? v i g1 = +10 a, v g2s = v ds = 0 gate2 to source breakdown voltage v (br)g2ss +6 ? ? v i g2 = +10 a, v g1s = v ds = 0 gate1 to source cutoff current i g1ss ? ? +100 na v g1s = +5 v, v g2s = v ds = 0 gate2 to source cutoff current i g2ss ? ? +100 na v g2s = +5 v, v g1s = v ds = 0 gate1 to source cutoff voltage v g1s(off) 0.5 0.7 1.0 v v ds = 5 v, v g2s = 4 v i d = 100 a gate2 to source cutoff voltage v g2s(off) 0.5 0.7 1.0 v v ds = 5 v, v g1s = 5 v i d = 100 a drain current i d(op) 8 11 14 ma v ds = 5 v, v g1 = 5 v v g2s = 4 v, r g = 180 k forward transfer admittance |y fs | 20 25 30 ms v ds = 5 v, v g1 = 5 v, v g2s =4 v r g = 180 k , f = 1 khz input capacitance ci ss 1.4 1.7 2.0 pf output capacitance co ss 0.7 1.1 1.5 pf reverse transfer capacit ance crss ? 0.02 0.05 pf v ds = 5 v, v g1 = 5 v v g2s =4 v, r g = 180 k f = 1 mhz power gain pg 17 22 ? db noise figure nf ? 1.6 2.2 db v ds = 5 v, v g1 = 5 v v g2s =4 v, r g = 180 k f = 900 mhz
bb502c preliminary r07ds0283ej0700 rev.7.00 page 3 of 10 mar 28, 2011 main characteristics gate 1 source drain gate 2 r g a i d v g2 v g1 output input v agc = 4 to 0.3 v v ds = 5 v r g v gg = 5 v bbfet rfc test circuit for operating items (i d(op) , |yfs|, ciss, coss, crss, nf, pg) application circuit
bb502c preliminary r07ds0283ej0700 rev.7.00 page 4 of 10 mar 28, 2011 900mhz power gain, noise figure test circuit c1, c2 c3 c4 to c6 r1 r2 r3 variable capacitor (10pf max) disk capacitor (1000pf) air capacitor (1000pf) 180 k 47 k 4.7 k : : : : : : 26 3 3 l2: 18 10 10 l4: 29 7 7 l3: ( 1mm copper wire) unit: mm rfc: 1mm copper wire with enamel 4turns inside dia 6mm 21 10 8 l1: 10 input ( 50 ) output ( 50 ) c2 c1 l1 l2 l3 l4 s g1 g2 r1 r2 c3 r3 rfc c6 c5 c4 d v g2 v g1 v d
bb502c preliminary r07ds0283ej0700 rev.7.00 page 5 of 10 mar 28, 2011 200 150 100 50 0 50 100 150 200 0 1234 5 20 16 12 8 4 v g2s = 4 v v g1 = v ds 20 16 12 8 4 0 1234 5 20 16 12 8 4 0 12345 v ds = 5 v r g = 120 k v ds = 5 v r g = 180 k channel power dissipation pch (mw) ambient temperature ta ( c) maximum channel power dissipation curve drain current i d (ma) typical output characteristics drain to source voltage v ds (v) drain current vs. gate1 voltage gate1 voltage v g1 (v) drain current i d (ma) drain current vs. gate1 voltage gate1 voltage v g1 (v) drain current i d (ma) r g = 120 k 330 k 270 k 180 k 220 k 150 k 2 v v g2 s = 1 v 4 v 3 v v g2 s = 1 v 3 v 4 v 2 v 20 16 12 8 4 0 12345 v ds = 5 v r g = 270 k 0 12345 30 24 18 12 6 v ds = 5 v r g = 120 k f = 1 khz drain current vs. gate1 voltage gate1 voltage v g1 (v) drain current i d (ma) gate1 voltage v g1 (v) forward transfer admittance vs. gate1 voltage forward transfer admittance |y fs | (ms) 2 v v g2s = 1 v 4 v 3 v 4 v 2 v 3 v v g2 s = 1 v
bb502c preliminary r07ds0283ej0700 rev.7.00 page 6 of 10 mar 28, 2011 0 12345 30 24 18 12 6 v ds = 5 v r g = 180 k f = 1 khz 0 12345 30 24 18 12 6 v ds = 5 v r g = 270 k f = 1 khz gate1 voltage v g1 (v) forward transfer admittance vs. gate1 voltage forward transfer admittance |y fs | (ms) gate1 voltage v g1 (v) forward transfer admittance vs. gate1 voltage forward transfer admittance |y fs | (ms) v g 2s = 1 v 4 v 3 v 2 v v g2s = 1 v 4 v 3 v 0 51015 20 4 3 2 1 0 100 200 500 1000 0 5 10 15 20 30 25 20 15 10 5 0 100 1000 200 500 30 25 20 15 10 5 0 v ds = v g1 = 5 v v g2s = 4 v r g = variable f = 900 mhz 4 3 2 1 0 v ds = v g1 = 5 v v g2s = 4 v r g = variable f = 900 mhz drain current i d (ma) noise figure nf (db) power gain pg (db) gate resistance r g (k ) noise figure vs. gate resistance gate resistance r g (k ) power gain vs. gate resistance power gain pg (db) drain current i d (ma) noise figure nf (db) power gain vs. drain current noise figure vs. drain current v ds = v g1 = 5 v v g2s = 4 v f = 900 mhz v ds = v g1 = 5 v v g2s = 4 v f = 900 mhz
bb502c preliminary r07ds0283ej0700 rev.7.00 page 7 of 10 mar 28, 2011 0 1 2 3 4 100 1000 200 500 4 3 2 1 0 20 15 10 5 0 25 20 15 10 5 0 1 23 4 v ds = 5 v r g = 180 k f = 900 mhz 1 23 4 5 4 3 2 1 v ds = 5 v r g = 180 k f = 900 mhz v ds = 5 v r g = 180 k f = 1 mhz v ds = v g1 = 5 v v g2s = 4 v drain current i d (ma) gate resistance r g (k ) power gain pg (db) power gain vs. gate2 to source voltage gate2 to source voltage v g2s (v) drain current vs. gate resistance gate2 to source voltage v g2s (v) gate2 to source voltage v g2s (v) input capacitance ciss (pf) input capacitance vs. gate2 to source voltage noise figure nf (db) noise figure vs. gate2 to source voltage 4 0 10 20 30 40 50 3 2 1 0 v ds = v g1 = 5 v v g2s = 4 v r g = 180 k gain reduction gr (db) gain reduction vs. gate2 to source voltage gate2 to source voltage v g2s (v)
bb502c preliminary r07ds0283ej0700 rev.7.00 page 8 of 10 mar 28, 2011 v ds = 5 v , v g1 = 5 v v g2s = 4 v , r g = 180 k , zo = 50 v ds = 5 v , v g1 = 5 v v g2s = 4 v , r g = 180 k , zo = 50 v ds = 5 v , v g1 = 5 v v g2s = 4 v , r g = 180 k , zo = 50 v ds = 5 v , v g1 = 5 v v g2s = 4 v , r g = 180 k , zo = 50 10 5 4 3 2 1.5 1 .8 ?2 ?3 ?4 ?5 ?10 .6 .4 .2 0 ?.2 ?.4 ?.6 ?.8 ?1 ?1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 1 / div. 0 30 60 90 120 150 180 ?150 ?90 ?60 ?30 ?120 scale: 0.002 / div. 0 30 60 90 120 150 180 ?150 ?90 ?60 ?30 ?120 10 5 4 3 2 1.5 1 .8 ?2 ?3 ?4 ?5 ?10 .6 .4 .2 0 ?.2 ?.4 ?.6 ?.8 ?1 ?1.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 test condition; 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) test condition: 50 to 1000 mhz (50 mhz step) s11 parameter vs. frequency s21 parameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency
bb502c preliminary r07ds0283ej0700 rev.7.00 page 9 of 10 mar 28, 2011 s parameter (v ds = v g1 = 5v, v g2s = 4v, r g = 180k , zo = 50 ) s11 s21 s12 s22 f(mhz) mag. ang. mag. ang. mag. ang. mag. ang. 50 0.994 ?2.8 2.52 176.2 0.00072 88.6 0.995 ?2.2 100 0.994 ?5.7 2.51 172.4 0.00161 80.9 0.998 ?4.0 150 0.991 ?9.2 2.50 168.1 0.00230 86.6 0.997 ?6.2 200 0.985 ?12.5 2.47 164.1 0.00297 78.0 0.996 ?8.2 250 0.985 ?15.5 2.46 160.0 0.00374 78.9 0.994 ?10.2 300 0.975 ?18.7 2.43 156.4 0.00436 80.6 0.992 ?12.2 350 0.969 ?22.0 2.40 152.3 0.00507 70.9 0.990 ?14.2 400 0.962 ?24.9 2.38 148.6 0.00557 77.3 0.989 ?16.3 450 0.954 ?27.7 2.35 144.6 0.00625 72.4 0.987 ?18.5 500 0.945 ?30.8 2.31 141.0 0.00663 70.0 0.984 ?20.4 550 0.935 ?33.8 2.28 136.7 0.00721 70.5 0.981 ?22.4 600 0.925 ?36.6 2.25 133.4 0.00747 68.4 0.978 ?24.3 650 0.918 ?39.5 2.21 130.3 0.00761 65.6 0.975 ?26.4 700 0.909 ?42.5 2.18 126.1 0.00807 65.6 0.972 ?28.3 750 0.898 ?45.0 2.14 122.9 0.00828 67.6 0.969 ?30.2 800 0.887 ?47.8 2.09 119.5 0.00801 65.1 0.965 ?32.2 850 0.874 ?50.6 2.07 116.0 0.00815 63.6 0.961 ?34.2 900 0.862 ?53.0 2.03 112.7 0.00832 65.1 0.958 ?36.1 950 0.855 ?55.5 1.99 109.4 0.00738 61.8 0.954 ?37.9 1000 0.845 ?58.1 1.95 108.1 0.00802 65.8 0.951 ?39.8
bb502c preliminary r07ds0283ej0700 rev.7.00 page 10 of 10 mar 28, 2011 package dimensions a s m x s y e e 2 b 1 a eh e l l 1 q c d b b b aa b 1 c b - b sect i on pattern of term i na l pos i t i on areas b 4 l 1 b 5 l 1 e 1 e 2 e a 3 l p s a a 2 a 1 a a 1 a 2 b b 1 c d e e h e l l p x y b 4 e 1 l 1 q 0 . 8 0 0 . 8 0 . 25 0 . 1 1 . 8 1 . 15 1 . 8 0 . 3 0 . 2 0 . 3 0 . 25 0 . 9 0 . 16 2 . 0 1 . 25 0 . 65 2 . 1 1 . 5 0 . 2 1 . 1 0 . 1 1 . 0 0 .4 0 . 35 0 .4 0 . 5 0 . 26 2 . 2 1 . 35 2 .4 0 . 7 l 1 0 . 10 . 5 0 . 6 0 . 05 0 . 05 0 .4 5 0 . 9 d i mens i on i n m illi meters reference symbo l m i n n om max a 3 e 2 0 . 6 b 5 0 . 55 sc - 82ab 0 . 006g mass [t yp .] cmpa k-4 ( t ) / cmpa k-4 ( t )v p t sp000 4 za - a r ene sas code jeit a package code prev i ous code b a - a sect i on c package n ame cmpa k-4 ordering information orderable part number quan tity shipping container bb502cbs-tl-e BB502CBS-TL-H 3000 178 mm reel, 8 mm emboss taping note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
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